GaN Semiconductor Devices Market Analysis – Global Industry Size, Share, Trends and Forecast 2022 - 2030

Category : Semiconductor and Electronics | Published at : September-2017 | Delivery Format : PDF | Status: Published | Pages : 250

Gallium Nitride (GaN) is a wide bandgap semiconductor material that is largely used in high-speed power semiconductor and optical devices and has gained traction over the recent years. GaN is used in manufacturing high voltage power transistors with the range over 600V and is the best alternative for bipolar silicon devices that are used in electric vehicles. Other important features of GaN material include high-brightness emission and intensity when used in opto-semiconductors, high power efficiency, superior high frequency handling capacity, and flexibility to be used alongside various substrates such as Si, sapphire, and SiC. Gallium Nitride is majorly used in power-semiconductors and opto-semiconductors. GaN is a hard material that possesses different chemical properties which make it suitable for manufacturing semiconductor devices. The popularity of GaN semiconductor devices is expected to increase with the growth in its application areas. Emergence of new technologies and rising application areas are the major drivers of GaN market. GaN semiconductor devices find huge opportunity in electric vehicles (EVs) and hybrid electric vehicles (HEVs); however, high cost of manufacturing to obtain pure GaN is a key challenge for the manufacturers.
Report Description
The market research study on “Gallium Nitride (GaN) Semiconductor Devices Market (Product Type: Power Semiconductor, Radio Frequency Devices, Opto Semiconductors; Application: Information and Communication Technology, Consumer Electronics, Defense and Aerospace, Automotive, Others; Wafer Size: 2 Inch, 4 Inch, 6 Inch, 8 Inch) – Global Industry Analysis, Market Size, Opportunities and Forecast, 2015-2024” offers a detailed study on the global GaN semiconductor devices market entailing insights on its different market segments. The report provides insight on global market, product type, applications, wafer size, and geography along with discussing various factors driving and restricting the market growth and their impact on the market. The report covers historic, current, and forecast market sizes for the mentioned market segments and sub-segments along with the country analysis for each of these regional markets. The major regional markets considered under the report scope include North America, Europe, Asia-Pacific, and Rest of the World. These regions are further bifurcated into major countries in the region. The rest of the world section is further divided into regional markets such as Latin America, Middle East and Africa. The report also features company profiles of few leading players operating in the market and the strategies deployment by them. 

Report Coverage


 Global Gallium Nitride (GaN) Semiconductor Devices Market

 Analysis Period

 2015 – 2024

 Historic Data


 Actual Data/Base Year


 Forecast Data

 2016 – 2022

 Market Stratification

 Product Type, Wafer Size, Application, Geography

 Regional Scope

 North America, Europe, Asia-Pacific, Rest of the World

 Report Coverage

 Key Trend Analysis, Drivers, Restraints, Market Positioning of Key Players

Market Dynamics
The rapid development in Gallium Nitride (GaN) technology along with the growing application areas of GaN are expected to fuel the growth of GaN semiconductor devices market to great extent. GaN, as compared to Si and GaAs, is a robust technology and possess better performance characteristics. GaN based devices offer high electron mobility, high thermal conductivity, saturation velocity, and high breakdown voltages. This has enabled the implementation of GaN in a number of high frequency RF devices and LEDs. Moreover, invertors for home appliances, power converter circuits, heavy electrical systems and hybrid vehicles are the other high power applications areas for the use of GaN power semiconductors. Further, there has been rapid advancement in GaN technology, as a result of which a number of companies are coming up with new innovative products that are cost-effective and have better design and performance. In order to address the growing demand for high power and high temperature applications there has been an increase in the usage of GaN semiconductor devices. Gallium Nitride semiconductor is widely used in manufacturing radio frequency amplifiers, light emitting diodes (LEDs) and high voltage applications among others, majorly due to its ability to operate at high temperature, high frequency, and high power density with superior efficiency and linearity. 
Segment Overview
North America was the largest market for GaN semiconductor devices in 2015 and accounted for over 30% share of the total market owing to the growth from military and defense applications. Also, growing use of GaN in consumer electronic devices such as personal computers, laptops, televisions, mobile phones, tablet PCs, etc. due to its power efficiency is driving the growth of this market in the region. Various manufacturers in the region are focusing on innovating new products that are power efficient and low cost, thus creating the future growth potential for GaN semiconductor based devices in North America. 
Asia-Pacific is the fastest growing market for GaN semiconductor devices, with the growth majorly coming from China. China accounted for majority of share in Asia-Pacific GaN semiconductor devices market in 2015, fuelled by the demand from consumer electronics sectors, most importantly from the mobile, communication and computing segments. Also, high performance GaN based transistors are likely to drive the growth of telecommunication sector in Asia-Pacific. The overall electronics market is expanding at a rapid pace in countries such as China and India for meeting the growing local demand. Therefore, these countries are expected to be the potential markets for GaN semiconductor devices. The growth in cloud computing is also set to boost new power architectures in datacenters. Thus, owing to the huge availability of skilled workers and raw materials and growing economy, several companies are looking forward to shift their manufacturing units in the APAC. Considering all the above mentioned factors, the GaN semiconductor devices market is expected to witness steady growth throughout the forecast period.
Market Segmentation
Market By Product Type
  • Power Semiconductors
    • Schottky Diode
    • High Electron Mobility Transistors (HEMTs)
    • Integrated Circuit (IC)
  • Radio Frequency Devices
  • Opto Semiconductors
Market By Wafer Size
  • 2 Inch
  • 4 Inch
  • 6 Inch
  • 8 Inch
Market By Application
  • Information and Communication Technology 
  • Consumer Electronics 
  • Defense and Aerospace 
  • Automotive 
  • Others
Market By Geography
  • North America
    • U.S. 
    • Canada
    • Mexico
  • Europe
    • UK
    • Italy
    • France
    • Germany
    • Rest of Europe
  • Asia-Pacific
    • China
    • India
    • Japan
    • Rest of Asia-Pacific
  • Rest of the World (RoW)
    • Latin America
    • Middle East
    • Africa
Companies Profiled
The player profiled in the report includes Transphorm Inc., Avogy, Inc., NXP Semiconductors N.V., Fujitsu Limited, Cree Inc., Renesas Electronics Corporation, GaN Systems Inc., Toshiba Corporation, Nichia Corporation and Efficient Power Conversion Corporation among others. Mergers and acquisitions for innovation and new product development and partnership for enhancing product quality are some of the major strategies followed by leading players in this market to sustain market competition. 

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